Application:
MOCVD is a chemical vapor deposition technique for gas phase epitaxial growth of thin films using the organic metal decomposition reaction. In order to grow multi-component, large area, thin layer and ultrathin layer compound semiconductor material, in addition to consider the system sealing, flow, component transformation, etc., the most important point is to control the temperature of the reaction chamber. MOCVD chamber temperature control accuracy needs to reach 0.2℃ or higher. High temperature uniformity is also an important guarantee for the product yield.
Material Introduction:
As tungsten, molybdenum, rhenium refractory metal materials have heat resistant, low pollution, excellent creep resistance, high dimensional stability, low coefficient of expansion, welding performance and other advantages, they are widely used as filaments, heat shield, clamp and other parts for MOCVD heater.
- Rhenium filament
- Rhenium plate, rhenium piece, rhenium rod
- Tungsten rod, tungsten plate, tungsten foil, tungsten wire
- Other tungsten products
- Other molybdenum products
Product Specification: